Samsung DDR4 32GB 3200MHz M393A4G40AB3-CWE
Характеристики
- Производитель........................................................................................................................................................................................................
- Код производителя........................................................................................................................................................................................................M393A4G40AB3-CWE
- Артикул........................................................................................................................................................................................................УТ-00003540
- Гарантия........................................................................................................................................................................................................12 мес.
Общие параметры
- Тип памяти........................................................................................................................................................................................................DDR4
- Форм-фактор........................................................................................................................................................................................................RDIMM
- Объем модуля памяти........................................................................................................................................................................................................32 ГБ
- Тактовая частота........................................................................................................................................................................................................3200 МГц
- Пропускная способность........................................................................................................................................................................................................25600 МБ/с
- Регистровая память........................................................................................................................................................................................................да
- ECC-память........................................................................................................................................................................................................да
- Количество рангов........................................................................................................................................................................................................1
Тайминги
- CAS Latency (CL)........................................................................................................................................................................................................22
- RAS to CAS Delay (tRCD)........................................................................................................................................................................................................22
- Row Precharge Delay (tRP)........................................................................................................................................................................................................22